reverse breakdown
英 [rɪˈvɜːs ˈbreɪkdaʊn]
美 [rɪˈvɜːrs ˈbreɪkdaʊn]
网络 反向击穿; 反向擊穿
双语例句
- The reverse is true, too: Enabling response time breakdown in a performance schedule will not affect the response time breakdown configuration in a performance test.
反之依然，在性能调度中激活响应时间分解也不会影响性能测试中的响应时间分解配置。 - On the reverse of the paper mat on each tray is a nutritional breakdown of each dish albeit in tiny print.
每个托盘纸垫的背面则印着每道菜的营养成分细分表尽管字体印刷得很小。 - Semiconductor junctions have a "reverse breakdown voltage" at which a reverse-biased junction begins to conduct.
当反向偏置形成时，半导体的连接点会有反向击穿电压。 - Difficult to reverse, the breakdown in social solidarity and social bonds leads to increased lawlessness, violence and crime, to which the poor are most vulnerable within a society.
社会团结和社会纽带的瓦解是难以扭转的，从而导致违法、暴力和犯罪现象增加，穷人是社会里最易受其伤害的群体。 - Research of cold cathode made-up of reverse breakdown silicon PN junction
硅PN结反向击穿冷阴极研究 - The I V characteristics have also been measured. At room temperature, the forward turn on voltage is 0.8 V, the reverse breakdown voltage is higher than 200 V, and the leakage current is smaller than 10-10 A.
同时测试分析了该器件的IV特性：在室温下，正向开启电压为0.8V，反向击穿电压大于200V，反向漏电流小于10-10A； - The reverse breakdown silicon PN junction as a cold electron emission source has been studied and the results are reported here.
本文报导了硅PN结反向击穿冷阴极电子发射源的研究结果。 - With the increase of substrate temperature, the dielectric constant increases but the dielectric dissipation, the forward and reverse leakage current density all increase, while the breakdown strength decreases.
实验表明，随着沉积温度的升高，薄膜的介电常数、介电损耗、正反向漏电流密度增加，击穿场强下降。 - The reverse breakdown voltage may be related to the width of the active region.
反向击穿电压可能和作用区的宽度有关。 - Automatic measurement system for reverse breakdown characteristic of high voltage silicon stack
高压硅堆反向击穿特性自动测试系统 - The reverse breakdown voltage is dependent on resistivity of the cry-stalline substrate.
反向击穿电压取决于晶态衬底的电阻率。 - The effects on I-V characteristics observed in the Schottky diodes indicated that even a light-dose irradiation would obviously reduce the reverse breakdown voltage but slightly enlarge the reverse leakage current.
通过Ⅰ-Ⅴ测试技术，观察到在1MeV的小注量电子辐照后，GaN肖特基二极管的电流&电压特性退化，击穿电压明显减小，反向漏电流逐渐增大。 - The linear relation between the reverse breakdown voltage and un-doping active region ′ s thickness of PIN light emitting diode ( LED) was analyzed by using the ideal PIN structure ′ s electric field distribution model.
通过利用突变结PIN理想结构电场分布模型，分析了该结构发光二极管（LED）反向击穿电压与非故意掺杂有源区厚度的线性相关性。